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STP4N150 STW4N150
N-channel 1500V - 5 - 4A - TO-220/TO-247 Very high PowerMESHTM Power MOSFET
General features
Type STP4N150 STW4N150

VDSS (@Tjmax) 1500 V 1500 V
RDS(on) <7 <7
ID 4A 4A
3 1 2
Avalanche ruggedness Gate charge minimized Very low intrinsic capacitances High speed switching
TO-220
TO-247
Description
Using the well consolidated high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performances. The strengthened layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.
Internal schematic diagram
Applications
Switching application
Order codes
Part number STP4N150 STW4N150 Marking P4N150 W4N150 Package TO-220 TO-247 Packaging Tube Tube
August 2006
Rev 4
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Contents
STP4N150 - STW4N150
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6
3 4 5
Test circuit Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
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STP4N150 - STW4N150
Electrical ratings
1
Electrical ratings
Table 1.
Symbol VDS VDGR VGS ID ID IDM (1) PTOT
Absolute maximum ratings
Parameter Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20 k) Gate- source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC = 100C Drain current (pulsed) Total dissipation at TC = 25C Derating factor Value 1500 1500 30 4 2.5 12 160 1 -55 to 150 Unit V V V A A A W W/C C
Tj Tstg
Operating junction temperature Storage temperature
1. Pulse width limited by safe operating area
Table 2.
Symbol
Thermal data
Parameter TO-220 Value TO-247 0.78 62.5 50 C/W C/W Unit
Rthj-case Rthj-amb
Thermal resistance junction-case max Thermal resistance junction-ambient max
Table 3.
Symbol IAR EAS
Avalanche characteristics
Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) Single pulse avalanche energy (starting Tj = 25 C, ID = IAR, VDD = 50 V) Value 4 350 Unit A mJ
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Electrical characteristics
STP4N150 - STW4N150
2
Electrical characteristics
(TCASE=25C unless otherwise specified) Table 4.
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on
On/off states
Parameter Drain-source Breakdown voltage Zero gate voltage Drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 1 mA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125C VGS = 30 V VDS = VGS, ID = 250 A VGS = 10 V, ID = 2 A 3 4 5 Min. 1500 10 500 100 5 7 Typ. Max. Unit V A A A V
Table 5.
Symbol gfs (1) Ciss Coss Crss Td(on) Tr td(off) tf Qg Qgs Qgd
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Test conditions VDS = 30 V , ID = 2 A VDS = 25 V, f = 1 MHz, VGS = 0 Min. Typ. 3.5 1300 120 12 35 30 45 45 30 10 9 50 Max. Unit S pF pF pF ns ns ns ns nC nC nC
VDD = 750 V, ID = 2 A, RG = 4.7 , VGS = 10 V (see Figure 18) VDD = 600 V, ID = 4 A, VGS = 10 V (see Figure 19)
1. Pulsed: pulse duration=300s, duty cycle 1.5%
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STP4N150 - STW4N150
Electrical characteristics
Table 6.
Symbol ISD ISDM(1) VSD(2) trr Qrr IRRM trr Qrr IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 4 A, VGS = 0 ISD = 4 A, di/dt = 100 A/s VDD = 45V (see Figure 18) ISD = 4 A, di/dt = 100 A/s VDD = 45V, Tj = 150C (see Figure 18) 510 3 12 Test conditions Min. Typ. Max. 4 12 2 Unit A A V ns C A
Reverse recovery time Reverse recovery charge Reverse recovery current
615 4 12.6
ns C A
1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300s, duty cycle 1.5%
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Electrical characteristics
STP4N150 - STW4N150
2.1
Figure 1.
Electrical characteristics (curves)
Safe operating area for TO-220 Figure 2. Thermal impedance for TO-220
Figure 3.
Safe operating area for TO-247
Figure 4.
Thermal impedance for TO-247
Figure 5.
Output characterisics
Figure 6.
Transfer characteristics
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STP4N150 - STW4N150 Figure 7. Transconductance Figure 8.
Electrical characteristics Static drain-source on resistance
Figure 9.
Gate charge vs gate-source voltage Figure 10. Capacitance variations
Figure 11. Normalized gate threshold voltage vs temperature
Figure 12. Normalized on resistance vs temperature
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Electrical characteristics Figure 13. Source-drain diode forward characteristics
STP4N150 - STW4N150 Figure 14. Normalized BVDSS vs temperature
Figure 15. Maximum avalanche energy vs temperature
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STP4N150 - STW4N150
Test circuit Package mechanical data
3
Test circuit Package mechanical data
Figure 17. Unclamped inductive waveform
Figure 16. Unclamped inductive load test circuit
Figure 18. Switching times test circuit for resistive load
Figure 19. Gate charge test circuit
Figure 20. Test circuit for inductive load switching and diode recovery times
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Package mechanical data
STP4N150 - STW4N150
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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STP4N150 - STW4N150
Package mechanical data
TO-220 MECHANICAL DATA
DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154
oP
Q
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Package mechanical data
STP4N150 - STW4N150
TO-247 MECHANICAL DATA
mm. MIN. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 0.140 0.177 0.216 14.80 4.30 0.560 0.14 0.728 0.143 0.216 TYP MAX. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 MIN. 0.19 0.086 0.039 0.079 0.118 0.015 0.781 0.608 0.214 0.582 0.17 inch TYP. MAX. 0.20 0.102 0.055 0.094 0.134 0.03 0.793 0.620
DIM. A A1 b b1 b2 c D E e L L1 L2 oP oR S
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STP4N150 - STW4N150
Revision history
5
Revision history
Table 7.
Date 29-Mar-2005 07-Jul-2005 07-Oct-2005 10-Aug-2006
Revision history
Revision 1 2 3 4 First release Removed TO-220FP Complete version New template, no content change Changes
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STP4N150 - STW4N150
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